Consider the process technology for which L = 0.4um, tox = 8nm, un = 450cm^2/V*s, and Vth = 0.7v.
a. find Cox and k’n.
b. For the mosfet with W/L = 8um/0.8um, calculate the values of Vds(sat), Vgs, and Vds needed to operate the transistor in the saturation region with a dc current Id= 100uA.
c. for the device in (b), find the values of Vds(sat) and Vgs required to cause the device to operate as a 1000 ohms resistor for a very small Vds.